ENGLISH  |  中文

  • Application of Agilent's PNA-X Nonlinear Vector Network Analyzer and X-Parameters in Power Amplifier Design
  • White Paper from Agilent Technologies

    Provided by:

     

    Application of Agilent's PNA-X Nonlinear Vector Network Analyzer and X-Parameters in Power Amplifier Design

    Overview

    High-power radio frequency (RF) amplifiers are used throughout the telecommunications, biomedical, and military industries. These amplifiers typically have strict design specifications on gain, output power and power-added-efficiency (PAE). To meet these stringent requirements necessitates an in-depth understanding of the transistor technology utilized in the RF amplifier. The linear and nonlinear behavior of the transistor must be determined to properly design the RF amplifier within the specification limits.

     

    Problem: Nonlinear Characterization Wanted

    Recent improvements in semiconductor technology, such as laterally diffused metal oxide semiconductor (LDMOS) and gallium nitride high electron mobility transistors (GaN-HEMT), are empowering researchers to develop high-performance microwave circuits and systems. When operated in their nonlinear regions and properly terminated, these devices result in high-efficiency power amplifiers (PA). Working with new technologies presents a number of challenges for PA designers and drives the need for accurate and reliable nonlinear characterization and modeling of RF transistors to enable the predictable design of high-performance circuits and systems.

     

    Solution: X-Parameters

    One solution offering an answer to this dilemma is Agilent Technologies' PNA-X vector network analyzer. The PNA-X features an optional nonlinear vector network analyzer (NVNA) application for fast, accurate characterization and design of active devices and components. Using the PNA-X's NVNA, X-parameters* are measured and then used to create X-parameter models.

    X-parameters represent a new category of nonlinear network parameters for deterministic, high-frequency design, which can be used to characterize both a components' linear and nonlinear behavior. Thanks to the PNA-X and its NVNA application, engineers and scientists can now have the highest level of insight into nonlinear device behavior. Learn how to obtain actual linear and nonlinear component behavior to improve your power amplifier design using Agilent's solutions. This 16-page paper teaches you how to utilize the X-parameter model with a detailed analysis of designing a Class AB 45-Watt GaN amplifier.

     

    Click here to download this white paper



  • [Close]  [Print] Time:2011-8-27
  • Address: No.3 Xunyang Rd.,Chengdong Street,Fengze Dist.,Quanzhou,362000,China
  • Tel: 0086-595-22688100 Fax: 0086-595-22688815